Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-05-15
2007-05-15
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S513000, C438S700000, C257SE21008, C257S017000, C257S218000, C257S278000
Reexamination Certificate
active
10935909
ABSTRACT:
High density plasma chemical vapor deposition and etch back processes fill high aspect ratio gaps without liner erosion or further underlying structure attack. The characteristics of the deposition process are modulated such that the deposition component of the process initially dominates the sputter component of the process. For example, reactive gasses are introduced in a gradient fashion into the HDP reactor and introduction of bias power onto the substrate is delayed and gradually increased or reactor pressure is decreased. In the case of a multi-step etch enhanced gap fill process, the invention may involve gradually modulating deposition and etch components during transitions between process steps. By carefully controlling the transitions between process steps, including the introduction of reactive species into the HDP reactor and the application of source and bias power onto the substrate, structure erosion is prevented.
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Bayman Atiye
Gauri Vishal
Lim Mayasari
Ling Yong
Papasouliotis George D.
Beyer & Weaver, LLP
Nhu David
Novellus Systems Inc.
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