Process method to facilitate silicidation

Details Process method to facilitate silicidation Process method to facilitate silicidation

2004-07-19

2008-11-11

Deo, Duy-Vu N (Department: 1792)

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

C257S382000, C257S769000

Reexamination Certificate

active

07448395

ABSTRACT:
The present invention substantially removes dry etch residue from a dry plasma etch process110prior to depositing a cobalt layer124on silicon substrate and/or polysilicon material. Subsequently, one or more annealing processes128are performed that cause the cobalt to react with the silicon thereby forming cobalt silicide regions. The lack of dry etch residue remaining between the deposited cobalt and the underlying silicon permits the cobalt silicide regions to be formed substantially uniform with a desired silicide sheet and contact resistance. The dry etch residue is substantially removed by performing a first cleaning operation112and then an extended cleaning operation114that includes a suitable cleaning solution. The first cleaning operation typically removes some, but not all of the dry etch residue. The extended cleaning operation114is performed at a higher temperature and/or for an extended duration and substantially removes dry etch residue remaining after the first cleaning operation112.

REFERENCES:
patent: 6323519 (2001-11-01), Gardner et al.
patent: 6725119 (2004-04-01), Wake
patent: 6743721 (2004-06-01), Lur et al.
patent: 2002/0157686 (2002-10-01), Kenny et al.
patent: 2004/0058500 (2004-03-01), Lee et al.
patent: 2004/0201066 (2004-10-01), Han

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