Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-05-19
1999-12-28
Picardat, Kevin M.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438455, 438612, 438613, H01L 2144
Patent
active
060081139
ABSTRACT:
A jig for a fusion bonding process includes a sealable chamber having a first station for a first wafer and a second station for a second wafer. The wafers are initially separated from each other while a vacuum is created in the chamber. In one embodiment of the invention, movably mounted spacers separate the wafers while the vacuum is formed. The spacers are then moved to allow the wafers to come into contact and form an initial bond. In another embodiment, wafers in the first and second stations are tilted away from each other so that gravity keeps the wafers separated while the vacuum is formed. After the vacuum is formed, the chamber is rotated so that gravity pushes the two wafers together. In either embodiment, a mechanical pushing system or vibrational energy can apply force to induce or improve the initial bond. The initial bond seals cavities formed between the wafers. The jig can be transparent to infrared radiation or visible light to allow inspection of the initial bond and the sealing of the cavities. If the cavities are sealed, the wafers are removed from the chamber for annealing which strengthens the bond between the wafers. The cavities between the wafers inherit from the chamber a vacuum that helps to keep the wafers together during annealing.
REFERENCES:
patent: 4883215 (1989-11-01), Goesele et al.
patent: 5010036 (1991-04-01), Calviello et al.
patent: 5236118 (1993-08-01), Bower et al.
patent: 5451274 (1995-09-01), Gupta
patent: 5576251 (1996-11-01), Garabedian et al.
Ismail M. Salleh
Wong Jeffrey K.
Collins D. Mark
Kavlico Corporation
Millers David T.
Picardat Kevin M.
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