Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

1992-04-28

1995-04-04

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257332, 257334, 257401, H01L 2978, H01L 2702

Patent

active

054040388

ABSTRACT:
A semiconductor device and a method of manufacturing thereof has an opening of circular or oval columnar configuration in an active layer where a gate electrode is formed in self-alignment in a sidewall-spacer manner. The channel region has a curved surface so that a relatively large area can be ensured where the width of a gate electrode is constant to suppress the increase of threshold voltage due to narrow channel effect in accordance with miniaturization. Therefore, a vertical type MOS field effect transistor can be formed without degradation in transistor characteristic in accordance with miniaturization.

REFERENCES:
patent: 4929990 (1990-05-01), Yoneda

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