Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2007-02-12
2010-06-08
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S183000, C438S926000, C257SE21453
Reexamination Certificate
active
07732299
ABSTRACT:
The present disclosure provide a method of manufacturing a microelectronic device. The method includes forming a top metal layer on a first substrate, in which the top metal layer has a plurality of interconnect features and a first dummy feature; forming a first dielectric layer over the top metal layer; etching the first dielectric layer in a target region substantially vertically aligned to the plurality of interconnect features and the first dummy feature of the top metal layer; performing a chemical mechanical polishing (CMP) process over the first dielectric layer; and thereafter bonding the first substrate to a second substrate.
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Chang Fa-Yuan
Cheng Chu-Wei
Ho Chin-Hsiang
Hsieh Yuan-Chih
Lai Tsung-Mu
Ghyka Alexander G
Haynes and Boone LLP
Nikmanesh Seahvosh J
Taiwan Semiconductor Manufacturing Company , Ltd.
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