Process for using bilayer photoresist

Details Process for using bilayer photoresist Process for using bilayer photoresist

1997-03-28

1999-11-16

Codd, Bernard

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430156, 430166, 4302731, 430323, 430910, G03C 516

Patent

active

059855240

ABSTRACT:
The invention relates to a process for forming bilayer resist images with a chemically-amplified, radiation-sensitive bilayer resist. The bilayer resist is disposed on a substrate and comprises (i) a top imaging layer comprising a radiation-sensitive acid generator and a vinyl polymer having an acid-cleavable silylethoxy group and (ii) an organic underlayer. The bilayer resist is used in the manufacture of integrated circuits.

REFERENCES:
patent: 2438612 (1948-03-01), MacKenzie et al.
patent: 2985631 (1961-05-01), Jones et al.
patent: 3179612 (1965-04-01), Plueddemann
patent: 3467634 (1969-09-01), Jacknow et al.
patent: 3746734 (1973-07-01), Berger et al.
patent: 3870766 (1975-03-01), Chadha
patent: 4398007 (1983-08-01), Kubota et al.
patent: 4491508 (1985-01-01), Olson et al.
patent: 4564576 (1986-01-01), Saigo et al.
patent: 4910255 (1990-03-01), Wakabayashi et al.
patent: 4999280 (1991-03-01), Hiraoka
patent: 5045431 (1991-09-01), Allen et al.
patent: 5068169 (1991-11-01), Takechi et al.
patent: 5071730 (1991-12-01), Allen et al.
patent: 5085972 (1992-02-01), Vogel
patent: 5204226 (1993-04-01), Baier et al.
patent: 5219705 (1993-06-01), Kato et al.
patent: 5229435 (1993-07-01), Sakai et al.
patent: 5236968 (1993-08-01), Hirschmann
patent: 5326584 (1994-07-01), Kamel et al.
patent: 5326670 (1994-07-01), Kotachi et al.
patent: 5332648 (1994-07-01), Kihara et al.
patent: 5336797 (1994-08-01), McGee et al.
patent: 5552260 (1996-09-01), Vogel et al.
patent: 5580694 (1996-12-01), Allen et al.
patent: 5665527 (1997-09-01), Allen et al.
patent: 5856071 (1999-05-01), Kotachi et al.
Reichmanis et al., "Chemical Amplification Mechanisms for Microlithography", pp. 394-407, 1991.
Lamola et al, "Chemically Amplified Resists", pp.53-60, Aug. 1991.
R. D. Miller et al., "Polymeric Silicon-containing Resist Materials", Advanced Materials for Optics and Electronics, vol. 4, 1994, pp. 95-127.

Affiliated with

Also associated with

Rating

Process for using bilayer photoresist does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for using bilayer photoresist, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for using bilayer photoresist will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1322631