Etching a substrate: processes – Gas phase etching of substrate – Etching inorganic substrate
Reexamination Certificate
2006-04-11
2006-04-11
Olsen, Allan (Department: 1763)
Etching a substrate: processes
Gas phase etching of substrate
Etching inorganic substrate
C216S075000, C216S076000, C134S002000, C134S003000, C134S009000, C134S021000, C134S022100, C438S706000
Reexamination Certificate
active
07025896
ABSTRACT:
Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their oxides, and the ozone without any damages to wafers and reactors and application of the catalysis not only to the etching but also to chamber cleaning ensures stable operation of reactors and production of high quality devices.
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Arai Toshiyuki
Nakahara Miwako
Ohno Shigeru
Tsunekawa Sukeyoshi
Watanabe Kazuto
Antonelli, Terry Stout and Kraus, LLP.
Olsen Allan
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