Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1995-08-31
1998-08-25
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438308, 438795, 438798, H01L 218234
Patent
active
057982880
ABSTRACT:
The present invention relates to a process for the production of a random access memory of the preloading static type, in which use is made of a static random access memory constituted by MOS transistors formed from the memory flip-flop array and in which a particle or photon beam is applied to the said MOS transistors in such a way that the accumulated dose received exceeds a predetermined value.
REFERENCES:
patent: 5053848 (1991-10-01), Houston et al.
Grenouilloux Charles
Joffre Francis
Bowers Jr. Charles L.
Commissariat a l''Energie Atomique
Gurley Lynne A.
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