Process for the production of an optoelectronic component having

Details Process for the production of an optoelectronic component having Process for the production of an optoelectronic component having

1995-03-09

1997-02-11

Powell, William

Etching a substrate: processes

Etching of semiconductor material to produce an article...

216 24, 216 41, 1566491, 15665911, H01L 2100, B44C 122

Patent

active

056017316

ABSTRACT:
The process for production of an optoelectronic component having a predetermined coupling coefficient distribution and a predetermined phase shift distribution includes providing a photomask defining lateral and axial geometry of the grating fields of the optoelectronic compound, particularly predetermined curved grating boundaries between regions of the optoelectronic component having the grating fields and grating-free regions; performing a spin-on deposition of a photoresist on the semiconductor layers of a semiconductor substrate; structuring the semiconductor layers so that a DFB or DBR grating structure is located between the spin-on photoresist and the semiconductor substrate; after performing the spin-on deposition of the photoresist, exposing the photoresist using the provided photomask to form the optoelectronic component in the semiconductor substrate; and after the exposing of the photoresist using the photomask, etching surfaces of the optoelectronic component which are to be free of the grating fields to remove material to a minimum depth reaching a horizontal xz-plane corresponding to deepest points in the grating trenches of the grating fields.

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