Patent
1990-06-15
1992-07-14
James, Andrew J.
357 55, 357 237, H01L 2934, H01L 2906, H01L 2978
Patent
active
051307782
ABSTRACT:
There is provided a semiconductor article together with a process for producing the same which article has a plurality of semiconductor single crystal regions comprising a semiconductor single crystal region of one electroconductive type and a semiconductor single crystal region of the opposite electroconductive type on the same insulator substrate. At least the semiconductor single crystal region of one electroconductive type being provided by forming a different material which is sufficiently greater in nucleation density than the material of the insulator substrate and sufficiently fine to the extent that only one single nucleus of the semiconductor material can grow and then permitting the semiconductor material to grow around the single nucleus formed as the center.
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patent: 4751561 (1988-06-01), Tastrzebski
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patent: 5061981 (1991-10-01), Hall
Arikawa Shiro
Yonehara Takao
Canon Kabushiki Kaisha
James Andrew J.
Meier Stephen D.
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