Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2006-07-04
2006-07-04
Chen, Jack (Department: 2813)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S720000
Reexamination Certificate
active
07071110
ABSTRACT:
A process enables plasma etching of materials that do not contain silicon. The process is particularly suitable for the side wall passivation of chromium layers in masks for fabricating semiconductor components. The plasma contains oxygen and/or nitrogen, and at least one silicon-donating compound is introduced into the plasma. This allows efficient passivation of side walls.
REFERENCES:
patent: 5100505 (1992-03-01), Cathey, Jr.
patent: 5185058 (1993-02-01), Cathey, Jr.
patent: 5273609 (1993-12-01), Moslehi
patent: 5679215 (1997-10-01), Barnes et al.
patent: 5714306 (1998-02-01), Komatsu et al.
patent: 6124177 (2000-09-01), Lin et al.
patent: 6491835 (2002-12-01), Kumar et al.
patent: 2003/0003374 (2003-01-01), Buie et al.
Van Zant, Microchip Fabrication, 4th ed. McGraw-Hill: New York, 2000, pp. 274-277.
Abstract of S. S. Georgiev, “The neutralization of sodium ions in plasma-deposited SiO2 layers” Thin Solid Films, 121(4), Nov. 30, 1984, pp. 271-277.
Abstract of Ullal et al., “Relation between the ion flux, gas phase composition, and wall conditions in chlorine plasma etching of silicon” Journal of Vacuum Science and Technology A 21(3), May 2003, pp. 589-595.
Mathuni Josef
Ruhl Günther
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