Process for the homoepitaxial growth of single-crystal silicon c

Details Process for the homoepitaxial growth of single-crystal silicon c Process for the homoepitaxial growth of single-crystal silicon c

1991-06-12

1993-09-28

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

148 33, 148DIG148, 156646, 156662, 156612, 156DIG64, 252 791, 423346, 427249, 427309, 437100, H01L 21306, H01L 2120

Patent

active

052483851

ABSTRACT:
The invention is a method for growing homoepitaxial films of SiC on low-tilt-angle vicinal (0001) SiC wafers. The invention proposes and teaches a new theoretical model for the homoepitaxial growth of SiC films on (0001) SiC substrates. The inventive method consists of (1) preparing the growth surface of SiC wafers slightly off-axis (from less than 0.1.degree. to 6.degree.) from the (0001) plane, (2) subjecting the growth surface to a suitable etch, and then (3) growing the homoepitaxial film using conventional SiC growth techniques.

REFERENCES:
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patent: 3520740 (1970-07-01), Addamiano
patent: 4664944 (1987-05-01), Hsu et al.
patent: 4866005 (1989-09-01), Davis et al.
patent: 4912063 (1990-03-01), Davis et al.
patent: 4912064 (1990-03-01), Kong et al.
patent: 4946547 (1990-08-01), Palmour et al.
Jennings, V. J. et al., "The Expitaxial Growth of Silicon Carbide," Journal of the Electrochemical Society, vol. 113, No. 7, Jul., 1966, pp. 728-731.

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