Process for the fabrication of thin-film device and...

Details Process for the fabrication of thin-film device and... Process for the fabrication of thin-film device and...

2007-02-06

2007-02-06

Deo, Duy-Vu N. (Department: 1765)

Etching a substrate: processes

Nongaseous phase etching of substrate

Substrate is multilayered

C216S103000, C216S104000, C438S747000

Reexamination Certificate

active

10782658

ABSTRACT:
A thin-film device is fabricated by forming a protective layer and a thin-film device layer one by one on a first substrate and bonding a second substrate on the thin-film device layer via a first adhesive layer or a coating layer and first adhesive layer, removing the first substrate at least in a part thereof by etching with a chemical solution, bonding the protective layer, which covers the thin-film device layer on a side of the first substrate, to a third substrate via a second adhesive layer, and removing the second substrate. The protective layer is formed of at least two layers having resistance to the chemical solution used upon removal of the first substrate.

REFERENCES:
patent: 5391257 (1995-02-01), Sullivan et al.
patent: 5472914 (1995-12-01), Martin et al.
patent: 5680190 (1997-10-01), Michibayashi et al.
patent: 6682990 (2004-01-01), Iwane et al.
patent: 6916681 (2005-07-01), Asano et al.
patent: 2001-189460 (2001-07-01), None
patent: 2001-353700 (2001-12-01), None
patent: 2002-184959 (2002-06-01), None
Australian Patent Office Search Report dated Jan. 23, 2006.

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