Process for the fabrication of semiconductor devices having vari

Details Process for the fabrication of semiconductor devices having vari Process for the fabrication of semiconductor devices having vari

1997-05-12

1998-08-04

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438220, 438294, 438356, 438414, H01L 218249

Patent

active

057892881

ABSTRACT:
A process for doping a P-type substrate (50) by forming a layer (52) of silicon nitride, implanting N-type impurities through this layer (FIG. 7), forming a resist mask (54) which leaves at least one area of the substrate (FIG. 8) containing a part of the nitride layer exposed, implanting N-type impurities first with an insufficient energy and then with a sufficient energy to traverse the nitride layer, subjecting (FIG. 9) the substrate to a high temperature treatment in an oxidizing environment to form silicon dioxide pads (55) on the areas of the substrate not covered by the nitride layer, removing the nitride layer and performing an implantation of P-type impurities into the areas delimited by the pads. The process then continues with the removal of the pads and, in the conventional manner, with the formation of an epitaxial layer and selective doping of this to form P-type and N-type regions in it. The process described allows the production of integrated devices with an additional buried layer while utilizing one fewer mask than conventional processes.

REFERENCES:
patent: 4404738 (1983-09-01), Sasaki et al.
patent: 4456488 (1984-06-01), Gahle
patent: 5110749 (1992-05-01), Ikeda
patent: 5330922 (1994-07-01), Erdeljac et al.
patent: 5556796 (1996-09-01), Garnett et al.

Affiliated with

Also associated with

Rating

Process for the fabrication of semiconductor devices having vari does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for the fabrication of semiconductor devices having vari, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for the fabrication of semiconductor devices having vari will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1176529