Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1992-11-09
1994-11-15
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 97, 117101, 117106, 117913, 117923, 117951, 437100, 148DIG168, 148DIG148, H01L 21306, H01L 2120
Patent
active
053638000
ABSTRACT:
This invention is a method for the controlled growth of single-crystal semiconductor-device-quality films of SiC polytypes on vicinal (0001) SiC wafers with low tilt angles. Both homoepitaxial and heteroepitaxial SiC films can be produced on the same wafer. In particular, 3C-SiC and 6H-SiC films can be produced within selected areas of the same 6H-SiC wafer.
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Larkin David J.
Powell J. Anthony
Breneman R. Bruce
Fleck Linda J.
Mackin James A.
Miller Guy M.
Shook Gene E.
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