Process for synthesis of cubic GaN on GaAs using NH.sub.3 in an

Details Process for synthesis of cubic GaN on GaAs using NH.sub.3 in an Process for synthesis of cubic GaN on GaAs using NH.sub.3 in an

1996-07-16

1998-11-10

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

438718, 438796, 438798, C23C 1108

Patent

active

058343792

ABSTRACT:
A process for synthesizing wide band gap materials, specifically, GaN, employs plasma-assisted and thermal nitridation with NH.sub.3 to convert GaAs to GaN. Thermal assisted nitridation with NH.sub.3 can be employed for forming layers of substantial thickness (on the order of 1 micron) of cubic and hexagonal GaN on a GaAs substrate. Plasma-assisted nitridation of NH.sub.3 results in formation of predominantly cubic GaN, a form particularly useful in optoelectronic devices. Preferably, very thin GaAs membranes are employed to permit formation thereon of GaN layers of any desired thickness without concern for critical thickness constraints. The thin membranes are preferably formed either with an epitaxial bonding technique, or by undercut etching.

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