Process for selectively etching a layer of silicon dioxide on an

Details Process for selectively etching a layer of silicon dioxide on an Process for selectively etching a layer of silicon dioxide on an

1992-06-15

1994-02-15

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156662, 156656, 1566591, H01L 2100

Patent

active

052863441

ABSTRACT:
More specifically, a process is provided for etching a multilayer structure to form a predetermined etched pattern therein. The subject process comprises providing the multilayer structure having a plurality of structural layers. The structural layers of the multilayer structure comprise a silicon dioxide outer layer on an underlying silicon nitride stop layer. Then, a chemical etchant protective layer is formed on a major surface of the multilayer structure having a predetermined pattern of openings, thereby exposing areas of the silicon dioxide outer layer corresponding to the predetermined pattern of openings. The exposed areas of the silicon dioxide outer layer are then etched down to the silicon nitride stop layer, at a high SiO.sub.2 etch rate and at a high level of selectivity of the SiO.sub.2 etch rate with respect to the Si.sub.3 N.sub.4 etch rate, with a fluorinated chemical etchant system. The fluorinated chemical etchant system includes an etchant material and an additive material. The additive material comprises a fluorocarbon material in which the number of hydrogen atoms is equal to or greater than the number of fluorine atoms. The etching step forms a substantially predetermined etch pattern in the silicon dioxide outer layer in which the contact sidewalls of said SiO.sub.2 outer layer are substantially upright.

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