Process for removal of residues remaining after etching polysili

Details Process for removal of residues remaining after etching polysili Process for removal of residues remaining after etching polysili

1992-05-27

1994-03-22

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566591, 156662, H01L 21306, B44C 122, C03C 1500

Patent

active

052960935

ABSTRACT:
The invention comprises an improvement in the process wherein a polysilicon layer, which is formed over a step on an integrated circuit structure and masked with a photoresist, is anisotropically etched to remove the exposed portions of the polysilicon layer leaving sidewall residues of a polymerized silicon/oxide-containing material adjacent the polysilicon lines. The improvement comprises treating the integrated circuit substrate with an aqueous ammonium-containing base/peroxide solution to remove the residues of polymerized silicon/oxide-containing material, without undercutting the remaining polysilicon.

REFERENCES:
patent: 4652334 (1987-03-01), Jain et al.
patent: 4690728 (1987-09-01), Tsang et al.
patent: 4808259 (1989-02-01), Jillie, Jr. et al.
patent: 5147499 (1992-09-01), Szwejkowski et al.

Affiliated with

Also associated with

Rating

Process for removal of residues remaining after etching polysili does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for removal of residues remaining after etching polysili, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for removal of residues remaining after etching polysili will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-434028