Process for reduced stress tungsten deposition

Details Process for reduced stress tungsten deposition Process for reduced stress tungsten deposition

1993-12-14

1995-01-17

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20429803, C23C 1434

Patent

active

053823400

ABSTRACT:
X-ray masks are typically made by depositing and patterning a layer of heavy metal on a thin supporting membrane. The metal layer must have a relatively low stress to prevent stress-induced deformation of the pattern. Tungsten films having excellent stress characteristics are produced by employing a continuously operating capacitance-based measurement technique to allow adjustment of the deposition conditions in rapid response to changes in stress of the film being deposited.

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Y. Ku et al. "Use of ion . . . masks", J. Vac. Scie Technol. B6(6), Nov./Dec. 1988, pp. 2174-2177.
Journal of Vacuum Science & Technology, B9, 3297, (1991), Y. C. Ku et al.
IEEE Transactions on Electron Devices, ED-19, 1103-1108, Oct., 1972.
SPIE, vol. 1263, "Electron Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX", (1990), 251-258, L. E. Trimble.
U.S. Patent Application Serial No. 07/850,637, Filing Date Mar. 13, 1992, (Celler-Kola 17-1).
Journal of Vacuum Science & Technology, B9, 3301, (1991), R. R. Kola.

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