Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Reexamination Certificate
2005-02-07
2010-10-12
Monbleau, Davienne (Department: 2893)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
C438S478000, C257SE33035, C257SE21054, C257SE21459, C257SE21602, C257SE21605, C257SE21699
Reexamination Certificate
active
07811943
ABSTRACT:
A process is described for producing silicon carbide crystals having increased minority carrier lifetimes. The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers such that the resultant concentration of minority carrier recombination centers is lower than the first concentration.
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Carter, Jr. Calvin H.
Das Mrinal K.
Hobgood Hudson M.
Jenny Jason R.
Malta David P.
Cree Inc.
Monbleau Davienne
Moore & Van Allen PLLC
Phillips Steven B.
Reames Matthew
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