Process for producing doped semiconductor wafers from...

Details Process for producing doped semiconductor wafers from... Process for producing doped semiconductor wafers from...

2007-04-10

2007-04-10

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S517000, C438S546000, C257S607000, C257S633000

Reexamination Certificate

active

11199603

ABSTRACT:
A process for producing doped semiconductor wafers from silicon, which contain an electrically active dopant, such as boron, phosphorus, arsenic or antimony, optionally are additionally doped with germanium and have a defined thermal conductivity, involves producing a single crystal from silicon and processing further to form semiconductor wafers, the thermal conductivity being established by selecting a concentration of the electrically active dopant and optionally a concentration of germanium. Semiconductor wafers produced from silicon by the process have specific properties with regard to thermal conductivity and resistivity.

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