Process for producing an integrated electronic circuit that...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S393000

Reexamination Certificate

active

07033887

ABSTRACT:
A process for producing an integrated electronic circuit that includes a capacitor comprises the formation of a stack on top of a substrate (100, 101). The stack comprises a first volume of a temporary material, a second volume (2) of at least one insulating dielectric and a third volume (3) of a first electrically conducting material. After a coating material (4) has been deposited on the stack, the temporary material is removed via access shafts (C1, C2) that are formed between a surface (S) of the circuit and the first volume. The temporary material is then replaced with a second, electrically conducting material.

REFERENCES:
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patent: 5155657 (1992-10-01), Oehrlein et al.
patent: 5196365 (1993-03-01), Gotou
patent: 5479316 (1995-12-01), Smrtic et al.
patent: 5985731 (1999-11-01), Weng et al.
patent: 6037212 (2000-03-01), Chao
patent: 6204119 (2001-03-01), Lange et al.
patent: 6551399 (2003-04-01), Sneh et al.
French Preliminary Search Report dated Apr. 16, 2004 for French Appl. No. 03 06031.

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