Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-04-25
2006-04-25
Kennedy, Jennifer (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S393000
Reexamination Certificate
active
07033887
ABSTRACT:
A process for producing an integrated electronic circuit that includes a capacitor comprises the formation of a stack on top of a substrate (100, 101). The stack comprises a first volume of a temporary material, a second volume (2) of at least one insulating dielectric and a third volume (3) of a first electrically conducting material. After a coating material (4) has been deposited on the stack, the temporary material is removed via access shafts (C1, C2) that are formed between a surface (S) of the circuit and the first volume. The temporary material is then replaced with a second, electrically conducting material.
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French Preliminary Search Report dated Apr. 16, 2004 for French Appl. No. 03 06031.
Cremer Sébastien
Delpech Philippe
Regnier Christophe
Fleit Kain Gibbons Gutman Bongini & Bianco P.L.
Gibbons Jon A.
Kennedy Jennifer
STMicroelectronics SA
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