Process for producing a silicon single crystal which is...

Details Process for producing a silicon single crystal which is... Process for producing a silicon single crystal which is...

2006-07-04

2006-07-04

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S013000, C117S019000

Reexamination Certificate

active

07070649

ABSTRACT:
A process for producing a doped silicon single crystal, comprising after-doping the melt during the pulling process with a quantity of volatile dopant ΔN(t), calculated according to the equationin-line-formulae description="In-line Formulae" end="lead"?ΔN(t)=N0−N(t)=N0·(1−e−λa·t)in-line-formulae description="In-line Formulae" end="tail"?or according to the approximation equationin-line-formulae description="In-line Formulae" end="lead"?ΔN(t)=N0·λa·tin-line-formulae description="In-line Formulae" end="tail"?where λais an evaporation coefficient which describes process-specific evaporation behavior of the foreign substance and which is obtained after a resistance profile R(t) of a further single crystal has been measured and calculated according to the equationin-line-formulae description="In-line Formulae" end="lead"?R(t)=R0·eλa·t,in-line-formulae description="In-line Formulae" end="tail"?where R0is a starting resistivity and the further single crystal is pulled under the same process conditions without being after-doped with the foreign substance.

REFERENCES:
patent: 1 644 009 (1970-09-01), None
patent: WO 86/03523 (1986-06-01), None
English Derwent Abstract AN 1975-69034 W corresponding to DE 000 1644009.
A. Trainor et P.T. Harris: “The control of Resistivity in Pulled Si Crystals”, Proc. of Phys. Soc, London (1959), 74 (p. 5; No. 479) , p. 669-670.
E. Sch{dot over (o)}ne: ,Ūber der EimfluB . . . , IHT-Mitteilungen I(3), 1962, p. 46-49.
Z. Liu et T. Carlberg: “A model for Dopant Conc. in CZ-Silicon Melts”, J. Electrochem. Soc. vol. 140, No. 7, Jul. 1993.
W. Zwehner et D. Huber: “Czochralski—Grown Silicon”, p. 26-38.
T. Izumi : “Model analysis of segregation phenomena . . . ”, J. of Crystal Growth 181 (1997), p. 210-217.
ASTM : Designation F723-99 : “Standard Practice for Conversion . . . ”, p. 1-17.

Affiliated with

Also associated with

Rating

Process for producing a silicon single crystal which is... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for producing a silicon single crystal which is..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing a silicon single crystal which is... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3564624