Semiconductor device and wiring forming method in...

Details Semiconductor device and wiring forming method in... Semiconductor device and wiring forming method in...

2006-07-11

2006-07-11

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C438S624000, C438S618000, C438S778000

Reexamination Certificate

active

07074706

ABSTRACT:
The present invention provides a semiconductor device in which a problem such as a thermal diffusion defect in a hollow wiring technique can be solved. In the semiconductor device, a gap is formed between wirings formed on a substrate, and the gap is filled with a gas having a thermal conductivity equal to or higher than three times that of air at 0° C.

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