Process for producing a semiconductor light-emitting device

Details Process for producing a semiconductor light-emitting device Process for producing a semiconductor light-emitting device

2006-10-17

2006-10-17

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C257SE33003

Reexamination Certificate

active

07122394

ABSTRACT:
Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

REFERENCES:
patent: 5814839 (1998-09-01), Hosoba
patent: 5981977 (1999-11-01), Furukawa et al.
patent: 6320209 (2001-11-01), Hata et al.
patent: 6924500 (2005-08-01), Okuyama et al.
patent: 09129974 (1997-05-01), None
patent: 10312971 (1998-11-01), None
Tachibana et al., “Selective growth of InGaN quantum dot structures and their microphotoluminescence at room temperature,” May 29, 2000, Applied Physics Letters, vol. 76, No. 22, pp. 3212-3214.

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