Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-10-14
2009-10-13
Parker, Kenneth A (Department: 2815)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S523000, C438S533000, C438S629000, C438S637000, C257SE21431, C257SE21434
Reexamination Certificate
active
07601634
ABSTRACT:
A region is locally modified so as to create a zone that extends as far as at least part of the surface of the region and is formed from a material that can be removed selectively with respect to the material of the region. The region is then covered with an insulating material. An orifice is formed in the insulating material emerging at the surface of the zone. The selectively removable material is removed from the zone through the orifice so as to form a cavity in place of the zone. The cavity and the orifice are then filled with at least one electrically conducting material so as to form a contact pad.
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Cerutti Robin
Coronel Philippe
Lenoble Damien
Diaz José R
Gardere Wynne & Sewell LLP
Parker Kenneth A
STMicroelectronics (Crolles 2) SAS
STMicroelectronics S.A.
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