Process for producing a carbon film on a substrate

Details Process for producing a carbon film on a substrate Process for producing a carbon film on a substrate

1999-07-08

2000-10-24

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419212, 20429809, 20419215, 20429807, 20429808, 2041922, C23C 1400

Patent

active

061361607

ABSTRACT:
In order to process a carbon film carbon is deposited on a substrate by sputtering from a carbon sputter target in a gas mixture which contains nitrogen in a minimum proportion of 20% and a sputter gas at a predetermined gas pressure and the substrate is then subjected under a high vacuum to thermal treatment at a temperature above 100.degree. C. The carbon films produced in this manner comprise a fiber and/or tube structure which extends substantially perpendicular to the film.

REFERENCES:
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patent: 5252367 (1993-10-01), Sato et al.
patent: 5507930 (1996-04-01), Yamashita et al.
patent: 5618389 (1997-04-01), Kreider
patent: 5846613 (1998-12-01), Neuville
Y.A. Li et al., Journal of Materials Science Letters, vol. 17 (1998), pp. 31-35.
E. Broitman et al., Applied Physics Letters, vol. 72, No. 20 (1998), p. 2532-33.
Applied Physics A, vol. 67, No. 1 (Jul. 1998), pp. 11-22 and 39-46.
L. Kouwenhoven, Science, vol. 275 (1997), p. 1896-97.

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