Process for preventing deposition on inner surfaces of CVD react

Details Process for preventing deposition on inner surfaces of CVD react Process for preventing deposition on inner surfaces of CVD react

1994-09-23

1998-03-17

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438683, 438685, 438687, 438905, 438958, 4272481, H01L 21285

Patent

active

057286299

ABSTRACT:
A process for forming a thin film by chemical vapor deposition which comprises repeating a substrate processing step on one or more substrates placed inside a reaction chamber by introducing a reaction gas inside the reaction chamber. The process includes a step of introducing a passivation gas or the like for passivating the surface of a thin film deposited on the fixing jig or other peripheral members between substrate processing steps. The passivation gas is, for example, an adsorbent gas or an oxidizing gas. More specifically, an example of an adsorbent gas is a mixture of an inert gas and from 0.1 to 10% of NH.sub.3 gas or SiH.sub.2 Cl.sub.2 gas, and an example of an oxidizing gas is a mixture of an inert gas and at least one selected from the group of oxygen, nitrogen, monoxide, and nitrogen dioxide. The inert gas may also be replaced with N.sub.2 gas.

REFERENCES:
patent: 4510172 (1985-04-01), Ray
patent: 4737474 (1988-04-01), Price et al.
patent: 4851295 (1989-07-01), Brors
patent: 5129958 (1992-07-01), Nagashima et al.
patent: 5158644 (1992-10-01), Cheung et al.
patent: 5207836 (1993-05-01), Chang
patent: 5326723 (1994-07-01), Petro et al.
patent: 5395796 (1995-03-01), Haskell et al.
patent: 5434109 (1995-07-01), Geissler et al.
patent: 5510297 (1996-04-01), Telford et al.
patent: 5565382 (1996-10-01), Tseng et al.
Webster'S II New Riverside University Dictionary, Riverside Publishing, 1984, p. 80.
Bryant, W.A., Kinetics of Tungsten Deposition by the Reaction of WF.sub.6 and Hydrogen, J. Electrochem. Soc.: Solid-State Science and Technology, Sep. 1978, pp. 1534-1543.

Affiliated with

Also associated with

Rating

Process for preventing deposition on inner surfaces of CVD react does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for preventing deposition on inner surfaces of CVD react, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for preventing deposition on inner surfaces of CVD react will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-957270