Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-07-24
1999-07-27
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438695, 438696, 438963, 438976, 438637, 438712, 438724, 438723, 438694, 438680, H01L 2144
Patent
active
059306645
ABSTRACT:
A method for etching access opening to aluminum alloy wire bonding pads of integrated circuit chips is described wherein a polymer layer is in-situ deposited into the opening after the bonding pad has been exposed by dry etching of a passivation layer. The passivation layer, is first etched with fluorocarbon etchants and then a TiN ARC layer is removed from over the aluminum bonding pad with etchants which may contain chlorine either as etch components or as a contaminant in an etchant such as SF.sub.6 non-volatile chlorine containing residues including AlCl.sub.3 and trapped Cl.sub.2, are left behind after the ARC layer has been removed. These cause corrosion of the bonding pad when exposed to atmospheric moisture. The polymer layer deposited immediately after the pad surface is exposed by the etchant, provides a temporary seal over the aluminum bonding pad, protecting it from exposure to moisture during subsequent processing steps.
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Chen Chi-Ping
Fan Chen-Peng
Hsu Fang-Jen
Yen Ming-Shuo
Ackerman Stephen B.
Niebling John F.
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
Zarneke David A.
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