Process for preparing semiconductor wafers with substantially no

Details Process for preparing semiconductor wafers with substantially no Process for preparing semiconductor wafers with substantially no

1976-11-05

1978-03-28

Rutledge, L. Dewayne

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

118 495, 148 15, 148175, 156612, 219343, 427 55, H01L 2120, H01L 21324

Patent

active

040813134

ABSTRACT:
Process and apparatus for heating substrates to form semiconductor regions. A gaseous reactant is introduced into a reaction chamber formed from a material, such as quartz, which is transparent and non-obstructive to radiant heat energy transmitted at a predetermined short wave length. A graphite susceptor, which is opaque to and absorbs the radiant heat energy, is positioned within the reaction chamber and supports the substrates to be processed. The susceptor and substrates are heated directly while the walls of the reaction chamber remain cool. The substrates are heated uniformly, and single crystal semiconductor wafers processed by this technique have little or no crystallographic slip. To further insure uniform heating, the susceptor may be moved relative to the radiant heat source which, in the preferred embodiment, comprises a bank of tungsten filament quartz-iodine high intensity lamps.

REFERENCES:
patent: 3047438 (1962-07-01), Marinace
patent: 3160517 (1964-12-01), Jenkin
patent: 3240915 (1966-03-01), Carter et al.
patent: 3364087 (1968-01-01), Soloman et al.
patent: 3408982 (1968-11-01), Capita
patent: 3424628 (1969-01-01), Winnings
patent: 3460510 (1969-08-01), Currin
patent: 3502516 (1970-03-01), Henker
patent: 3627590 (1971-12-01), Mammel
patent: 3661637 (1972-05-01), Sirtl
patent: 3692572 (1972-09-01), Strehlow
Powell, C. F., "Vapor Deposition" (Textbook) 1966, John Wiley & Sons Inc., N.Y., N.Y., pp. 263-267.

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