Process for polishing III-V-semiconductor surfaces

Details Process for polishing III-V-semiconductor surfaces Process for polishing III-V-semiconductor surfaces

1983-07-15

1984-05-15

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156662, 252 791, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

044486340

ABSTRACT:
Surfaces of III-V-semiconductors, especially gallium phosphide surfaces, can be polished very successfully if, in the polishing operation, an alkali metal hypochlorite solution adjusted to a pH value of from 8.5 to 11 by the addition of buffering components, and a liquid containing in addition to the mechanical polishing component a complex-forming component, are applied to the surface to be polished.

REFERENCES:
patent: 3775201 (1973-11-01), Basi
patent: 4043861 (1977-08-01), Jacob et al.
IBM Technical Disclosure Bulletin, vol. 23, No. 7A, Dec. 1980, Semiconduc Polishing Composition, B. Holley et al., p. 2750.

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