Process for planarizing surface of a semiconductor device

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers

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438763, 438692, 438633, 438634, H01L 2131

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06048800&

ABSTRACT:
A layer planarizing method for a semiconductor device is provided to attain excellent controllability of a polishing amount to form a uniform and flat layer without uniformity in polishing in a wafer surface. According to the method, a first layer is deposited over at least a top portion of a stepped portion formed on a surface of a body, the stepped portion covered with the first layer is covered with a second layer having a higher polishing rate than that of the first layer, and the second layer is polished until the first layer deposited on the top portion of the stepped portion is exposed.

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