Process for passivating polysilicon and process for...

Details Process for passivating polysilicon and process for... Process for passivating polysilicon and process for...

2007-04-03

2007-04-03

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S766000, C257SE21592

Reexamination Certificate

active

10678908

ABSTRACT:
A process for passivating polysilicon and a process for fabricating a polysilicon thin film transistor. A polysilicon layer is formed. Next, high-pressure annealing is performed using a fluorine-containing gas, a chlorine-containing gas, an oxygen-containing gas, a nitrogen-containing gas, or mixtures thereof to passivate the polysilicon layer.

REFERENCES:
patent: 5137839 (1992-08-01), Niitsu
patent: 5534445 (1996-07-01), Tran et al.
patent: 5840600 (1998-11-01), Yamazaki et al.
patent: 6172322 (2001-01-01), Shang et al.
patent: 2001/0021565 (2001-09-01), Chung et al.
IBM Tech. Discl. Bull. NN7908935 , vol. 22, No. 3, p. 935 (Aug. 1, 1979).

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