Process for packaging electronic devices using thin bonding...

Details Process for packaging electronic devices using thin bonding... Process for packaging electronic devices using thin bonding...

2005-05-10

2005-05-10

Alanko, Anita (Department: 1765)

Etching a substrate: processes

Etching of semiconductor material to produce an article...

C216S013000, C216S017000, C216S020000, C216S033000, C216S038000, C216S052000, C216S088000, C438S106000, C438S107000, C438S125000

Reexamination Certificate

active

06890445

ABSTRACT:
In the method, a cap wafer surface is lithographically etched at time of fabrication, so that a raised ridge onto which bonding material is placed is formed near a perimeter of a desired cavity region. This is done in order to reduce the bonding area between the cap wafer and electronic device wafers, so as to provide a better defined standoff. In another aspect of the method, the cap wager surface is lithographically etched to form recesses or trenches near the perimeter of a cavity region, each recess being filled with a sealing material, and polished if necessary to be flush with the cap wafer surface. Thereafter, the cap wafer surface is etched so that the filled recesses become the raised ridges which are used to bond a cap wafer to an electronic device wafer.

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