Process for oxide fabrication using oxidation steps below...

Details Process for oxide fabrication using oxidation steps below... Process for oxide fabrication using oxidation steps below...

2006-12-12

2006-12-12

Schillinger, Laura M. (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S778000, C438S787000

Reexamination Certificate

active

07148153

ABSTRACT:
A process for forming an oxide layer includes forming a first oxide portion over a substrate at a temperature below a threshold temperature. A second oxide portion is formed under the first oxide portion at a temperature above the threshold temperature. The substrate is illustratively oxidizable silicon and the threshold temperature is the viscoelastic temperature of silicon dioxide.

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Wolf, et al. Silicon Processing for the VLSI Era, vol. 1-Process Technology, Lattice Press: Sunset Beach CA, 1986, p. 5.

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