Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2007-08-14
2007-08-14
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S770000, C257SE21176
Reexamination Certificate
active
10905881
ABSTRACT:
A process for forming a semiconductor device having an oxide beanie structure (an oxide cap overhanging an underlying portion of the device). An oxide layer is first provided covering that portion, with the layer having a top surface and a side surface. The top and side surfaces are then exposed to an oxide deposition bath, thereby causing deposition of oxide on those surfaces. Deposition of oxide on the top surface causes growth of the cap layer in a vertical direction and deposition of oxide on the side surface causes growth of the cap layer in a horizontal direction, thereby forming the beanie structure.
REFERENCES:
patent: 5232781 (1993-08-01), Takemura et al.
patent: 6995065 (2006-02-01), Chou et al.
Furukawa Toshiharu
Hakey Mark C.
Holmes Steven J.
Horak David V.
Koburger, III Charles W.
Booth Richard A.
Cai Yuanmin
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