Process for multi-layer photoresist etching with minimal feature

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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430316, 430317, 430329, 430318, 156643, 1566611, G03F 700, H01L 21027

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active

051262312

ABSTRACT:
A process is disclosed for accurately forming an etch mask over the uneven surface of a semiconductor wafer using a multilayer photoresist. The process comprises forming a first or lower photoresist layer on the surface of a semiconductor wafer, forming one or more intermediate layers over the first photoresist layer, forming a second or upper photoresist layer over the one or more intermediate layers on the wafer, photolithographically forming a pattern in the second photoresist layer, reproducing the pattern in the intermediate layer below the second photoresist layer, removing the remainder of the upper photoresist layer, and then reproducing the pattern in the first photoresist layer using the pattern formed in the intermediate layer as a mask. In one embodiment a single intermediate layer is used in which the mask pattern is partially etched prior to removal of the upper photoresist. In another embodiment, two intermediate layers are used, with the lower layer used as an etch stop to permit the upper photoresist pattern to be completely etched through the upper intermediate layer before removal of the upper photoresist. The process offers improvement over the prior art by minimizing undercut caused by ion reflection as well as offering an unchanging process loading during the critical photoresist etch.

REFERENCES:
patent: 4244799 (1981-01-01), Fraser et al.
patent: 4683024 (1987-07-01), Miller et al.
patent: 4738916 (1988-04-01), Namatsu et al.

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