Process for monitoring ion-assisted processing procedures on waf

Radiant energy – Inspection of solids or liquids by charged particles – Positive ion probe or microscope type

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356381, 156626, 156627, G01N 23225

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active

054060800

ABSTRACT:
Disclosed is a process and an apparatus for monitoring ion-assisted processing procedures on wafers in a process chamber.
In accordance with the present invention the known process, respectively the known apparatus is improved by, for the determination of the energy of the ions and/or of the divergence of the ion beam, the red shift and/or the blue shift of emission lines resulting from the reflection of particles an the surface of the wafer being determined from the gases present in the process chamber.

REFERENCES:
patent: 4874947 (1989-10-01), Ward et al.
patent: 5223914 (1993-06-01), Auda et al.
Heinrich et al. Applied Physics Letters, vol. 55, No. 14, Oct. 7, 1961, pp. 474-1476.
Burrell et al., Review of Scientific Instruments, vol. 51, No. 11, Nov., 1980, pp. 1451-1462.
Dzioba et al. Journal of Applied Physics, vol. 53, No. 1, Jun. 1982, pp. 4389-4390.

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