Process for manufacturing semiconductor device

Details Process for manufacturing semiconductor device Process for manufacturing semiconductor device

2007-08-21

2009-08-18

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S778000, C438S762000, C438S758000, C438S680000

Reexamination Certificate

active

07576016

ABSTRACT:
An objective of this invention is to solve the problem that in ALD film deposition using a vertical batch processing machine advantageous for improving a throughput, reliability in a dielectric body formed on the bottom of a hole such as a capacitor formed on a semiconductor substrate is reduced as the hole is finer and deeper.A dielectric body is formed by an ALD film deposition process comprising a gas flow sequence where a purging step after supplying a source and a reactant gases is a two-stage purging of vacuum purging and gas purging and the step of supplying a reactant gas is further divided. The process allows a highly reliable dielectric body to be formed in the bottom of a deep hole, contributing to improvement in reliability of a capacitor and a semiconductor device.

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