Process for manufacturing non-volatile semiconductor memory devi

Details Process for manufacturing non-volatile semiconductor memory devi Process for manufacturing non-volatile semiconductor memory devi

1997-11-19

2000-05-30

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438264, 438528, 438910, H01L 218247

Patent

active

060690410

ABSTRACT:
A process for manufacturing a non-volatile semiconductor memory device by forming a tunnel dielectric film, a floating gate electrode, an interlayer capacitive film and a control gate electrode successively on a semiconductor substrate includes introducing nitrogen atoms into at least one of an interface between the floating gate electrode and the interlayer capacitive film and an interface between the interlayer capacitive film and the control gate electrode.

REFERENCES:
patent: 4774197 (1988-09-01), Haddad et al.
patent: 5464792 (1995-11-01), Tseng et al.
patent: 5571734 (1996-11-01), Tseng et al.
patent: 5837585 (1998-11-01), Wu et al.
T. Kuroi, et al., 1994, Symposium on VLSI Technology Digest of Technical Papers, "The Effects of Nitrogen Implantation of into P Poly-Silicon Gate on Gate Oxide Properties", pp. 107-108.

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