Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-07-19
2005-07-19
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S301000, C438S306000, C438S527000
Reexamination Certificate
active
06919252
ABSTRACT:
A MOS semiconductor device formed on a substrate of a first conductivity type is provided. The device includes active zones for elementary active elements, and at least one inactive zone suitable for electric signal input or output. The substrate is connected with the drain terminal of the device, and at least one of the elementary active elements includes a body region of a second conductivity type that is connected with the source terminal of the device. The at least one inactive zone includes a semiconductor region of the second conductivity type formed in the substrate and adjacent a surface of the substrate, a conductive layer located over the semiconductor region, and a silicon oxide layer located between the semiconductor region and the conductive layer. The silicon oxide layer has alternating first zones and second zones that are contiguous to each other, with the first zones having a greater thickness than the second zones.
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Ponzio Paola Maria
Schillaci Antonino
Bongini Stephen
Fleit Kain Gibbons Gutman Bongini & Bianco P.L.
Jorgenson Lisa K.
Picardat Kevin M.
STMicroelectronics S.r.l.
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