Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-06-12
2007-06-12
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S197000, C438S199000, C438S233000, C438S510000, C438S592000, C257SE21623, C257SE21587, C257SE21632, C257SE21627
Reexamination Certificate
active
11200741
ABSTRACT:
The present invention provides a method of forming a dual work function metal gate microelectronics device200. In one aspect, the method includes forming nMOS and pMOS stacked gate structures315aand315b. The nMOS and pMOS stacked gate structures315aand315beach comprise a gate dielectric205, a first metal layer,305located over the gate dielectric205and a sacrificial gate layer310located over the first metal layer305. The method further includes removing the sacrificial gate layer310in at least one of the nMOS or pMOS stacked gate structures, thereby forming a gate opening825and modifying the first metal layer305within the gate opening825to form a gate electrode with a desired work function.
REFERENCES:
patent: 2006/0019437 (2006-01-01), Murto et al.
patent: 2006/0084247 (2006-04-01), Liu
patent: 2006/0134844 (2006-06-01), Lu et al.
C. Ren et al.; “A Dual-Metal Gate Integration Process for CMOS With Sub-1-nm EOT HfO2 by Using HfN Replacement Gate”; IEEE Electron Device Letters, vol. 25, No. 8, Aug. 2004; pp. 580-582.
Seongjun Park, et al.; “Ab Initio Study of Metal Gate Electrode Work Function”; Applied Physics Letters, 86, 2005 American Institute of Physics; pp. 1-3.
Chambers James J.
Colombo Luigi
Visokay Mark R.
Ahmadi Mohsen
Brady III W. James
McLarty Patrick K.
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