Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-12-16
1998-10-06
Tsai, Jey
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438254, H01L 218242
Patent
active
058175539
ABSTRACT:
Capacitors, in particular stacked capacitors for a dynamic memory cell configuration are manufactured by first forming a sequence of layers, which include layers made of a first conductive material alternating with layers made of a second material. The second material can be selectively etched with respect to the first material. Layered structures are formed from the sequence of layers, with the flanks of the layered structures each having a conductive support structure. The layered structures are formed with openings, such as gaps, in which the surface of the layers is exposed. The layers made of the second material are selectively removed with respect to the layers made of the first material. The exposed surface of the layers made of the first material and of the support structure are provided with a capacitor dielectric, onto which a counter-electrode is placed. The capacitor is made by etching p.sup.- -doped polysilicon that is selective to p.sup.+ -doped polysilicon.
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patent: 5384276 (1995-01-01), Ogawa et al.
patent: 5637523 (1997-06-01), Fazan et al.
"Anisotropic Etching of Crystalline Silicon in Alkaline Solutions", J. Electrochem. Soc., vol. 137, No. 11, Nov. 1990.
"Multi-Shell Trench Capacitor Cell for Quarter Giga Bit Dram and Beyond", IBM Corp. 1990, pp. 473-474.
"A Deep-Trenched Capacitor Technology For 4 Mega Bit Dynamic Ram", Yamada et al., IDEM 1985, pp. 702-705.
Franosch Martin
Stengl Reinhard
Wendt Hermann
Greenberg Laurence A.
Lerner Herbert L.
Siemens Aktiengesellschaft
Tsai Jey
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