Process for manufacturing a semiconductor device

Details Process for manufacturing a semiconductor device Process for manufacturing a semiconductor device

1997-12-23

2000-08-15

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438234, H01L 218238

Patent

active

061035602

ABSTRACT:
Implantation of a high concentration of P type impurity in an emitter electrode can be prevented during forming a source-drain of PMOS and a extrinsic base, by keeping an insulating film intact only on an emitter electrode and simultaneously patterning the insulating electrode and a gate electrode, leading to prevention of increase and dispersion of an emitter resistance.

REFERENCES:
patent: 5026654 (1991-06-01), Tanba et al.
patent: 5089429 (1992-02-01), Hsu
patent: 5234847 (1993-08-01), Iranmanesh

Affiliated with

Also associated with

Rating

Process for manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for manufacturing a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2005790