Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2005-12-13
2005-12-13
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C365S158000, C257S382000
Reexamination Certificate
active
06974734
ABSTRACT:
A process wherein an insulating region is formed in a body at least around an array portion of a semiconductor body; a gate electrode of semiconductor material is formed on top of a circuitry portion of the semiconductor body; a first silicide protection mask is formed on top of the array portion; the gate electrode and the active areas of the circuitry portion are silicided and the first silicide protection mask is removed. The first silicide protection mask (is of polysilicon and is formed simultaneously with the gate electrode. A second silicide protection mask of dielectric material covering the first silicide protection mask is formed before silicidation of the gate electrode. The second silicide protection mask is formed simultaneously with spacers formed laterally to the gate electrode.
REFERENCES:
patent: 6177306 (2001-01-01), Wu
patent: 6573130 (2003-06-01), Patelmo et al.
patent: 2002/0177292 (2002-11-01), Dennison
patent: 2003/0219924 (2003-11-01), Bez et al.
patent: 1318552 (2003-06-01), None
Bez Roberto
Pellizzer Fabio
Tosi Marina
Calvin Lee
Han Hai
Jorgenson Lisa K.
Nelms David
Ovonyx Inc.
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