Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-10-18
2005-10-18
Thomas, Tom (Department: 2815)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C290S017000, C290S017000
Reexamination Certificate
active
06955970
ABSTRACT:
A power MOSFET die with a minimized figure of merit has of a planar stripe MOSFET geometry in which parallel diffused bases (or channels) are formed by implantation and diffusion of impurities through parallel elongated and spaced polysilicon stripes wherein the polysilicon line width is from about 3.2 to 3.4 microns, preferably 3.4 microns; the polyline spacing is from about 1 to 4 microns, preferably 1.5 microns and the diffused bases are spaced by greater than about 0.8 microns. The polysilicon stripes act as masks to the sequential formation of first base stripes, the source stripes and second higher concentration base stripes which are deeper than the first base stripes. Insulation side wall spacers are used to define a contact etch for the source contact. The above design geometry is used for both the forward control MOSFET and the synchronous rectifier MOSFET of a buck converter circuit.
REFERENCES:
patent: 5155052 (1992-10-01), Davies
patent: 5474946 (1995-12-01), Ajit et al.
patent: 5731604 (1998-03-01), Kinzer
patent: 5795793 (1998-08-01), Kinzer
patent: 6022790 (2000-02-01), Wagers et al.
patent: 6153473 (2000-11-01), Calafut et al.
patent: 401204474 (1989-08-01), None
International Rectifier Corporation
Ostrolenk Faber Gerb & Soffen, LLP
Richards N. Drew
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