Process for manufacture of integrated circuit device using a mat

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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438781, 438622, 438763, 438780, H01L 214763, H01L 21469

Patent

active

060936363

ABSTRACT:
The invention relates to a process for forming an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises porous organic polyarylene ether.

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