Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-07-27
2000-10-24
Chaudhari, Chandra
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438584, 438679, 257761, B22F 100
Patent
active
061367060
ABSTRACT:
A process for producing titanium that includes forming gaseous titanium and then transforming the gaseous titanium into solid titanium through condensation. The titanium gas is formed by vaporizing titania with an electron beam in the presence of carbon. The gas-containing vapor is cooled to form a titanium liquid or solid.
REFERENCES:
patent: 5728195 (1998-03-01), Eastman et al.
Froes Francis H.
Jabotinski Vadim J.
Chaudhari Chandra
Idaho Research Foundation
Kilday Lisa
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