Process for making semiconductor device having nitride at silico

Details Process for making semiconductor device having nitride at silico Process for making semiconductor device having nitride at silico

1998-04-08

2000-02-22

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

361305, H01L 21336

Patent

active

060279761

ABSTRACT:
A semiconductor device having a gate insulating layer that includes a high permittivity layer between thin nitride layers. A first nitride layer formed on a silicon substrate to control unwanted oxidation of the substrate. A high permittivity layer is deposited on the first nitride layer, and a second nitride layer deposited on the permittivity layer. A gate electrode is formed on the second nitride layer. The second nitride layer prevents oxidation of the gate electrode from the high permittivity layer.

REFERENCES:
patent: 5913118 (1997-12-01), Wu

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