Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-09-08
2000-07-18
Trinh, Michael
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438301, 438306, 438585, H01L 21336
Patent
active
060906766
ABSTRACT:
A process for making a high performance MOSFET with a scaled gate electrode thickness. In one embodiment, the process comprises first providing a substrate. A gate dielectric layer is formed on the substrate, and a gate electrode is formed on the gate dielectric layer. A middle portion of the gate electrode has a first height, and side portions of the gate electrode have heights that are less than the first height. A dopant species is implanted at a first energy level and at a first concentration, whereby lightly doped drain regions are formed in the substrate below the side portions of the gate electrode.
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Fulford H. Jim
Gardner Mark I.
May Charles E.
Advanced Micro Devices , Inc.
Trinh Michael
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